MHT-CET 2006
1. The depletion layer in a p - n junction diode is 10^-6 m wide and its knee potential is 0.5V, then the inner electric field in the depletion region is
- (A) 5 x 10^6 Vm^-1
- (B) 5 x 10^-7 Vm^-1
- (C) 5 x 10^5 Vm^-1
- (D) 5 x 10^-1 Vm^-1
MHT-CET 2012
2. In reverse bias p-n-junction diode depletion layer width
- (A) decreases
- (B) increases
- (C) remain same
- (D) Can't predicted
MHT-CET 2013
3. In a n-type semiconductor, which of the following statements is true?
- (A) Elections are majority carriers and trivalent atoms are dopants
- (B) Electrons are minority carriers and pentavalent atoms are dopants
- (C) Holes are minority carriers and pentavalent atoms are dopants
- (D) Holes are majority carriers and trivalent atoms are dopants
MHT-CET 2014
4. In insulators CB is conduction band and V.B is valence band
- (A) VB is partially filled with electrons
- (B) CB is partially filled with electrons
- (C) CB is empty and V.B is filled with electrons
- (D) CB is filled with electrons and V.B is empty
MHT-CET 2018
5. With forward biased mode, the p-n junction diode
- (A) is one in which width of depletion layer increases.
- (B) is one in which potential barrier increases
- (C) acts as closed switch
- (D) acts as open switch
MHT-CET 2019
6. In case of p-n junction diode, the width of depletion region is
- (A) increased by reverse biasing
- (B) increased by forward biasing
- (C) decreased with light doping
- (D) decreased with heavy doping
7. Breakdown in a semiconductor diode occurs when
- (A) the potential barrier becomes zero
- (B) reverse bias exceeds a certain value
- (C) forward bias exceeds a certain value
- (D) forward current exceeds a certain value
MHT-CET 2020
8. In a semiconductor diode, the barrier potential offers opposition to only
- (A) majority carriers in both regions
- (B) holes in the p-region
- (C) minority carriers in both regions
- (D) free electrons in the n-region
9. Electrical conductivity of insulators is
- (A) sometimes small and sometimes large.
- (B) extremely small.
- (C) exactly zero.
- (D) extremely large.
10. If p-n junction diode is forward biased then
- (A) barrier potential increases.
- (B) width of depletion layer increases
- (C) electric conduction is not possible
- (D) width of depletion layer decreases
11. At absolute zero temperature, pure silicon behaves as
- (A) superconductor
- (B) semiconductor
- (C) insulator
- (D) conductor
- (A) very low, empty
- (B) very low, partially filled
- (C) very high, empty
- (D) very high, completely filled
- (A) decreases and decreases
- (B) decreases and increases
- (C) increases and increases
- (D) increases and decreases
- (A) insulator
- (B) extrinsic semiconductor
- (C) non-metal
- (D)metal
15. When a small amount of impurity atoms are added to a semiconductor then generally its resistivity
- (A) does not change
- (B) increases
- (C) decreases
- (D) May increase or decrease depending upon the percentage of doping.
- (A) decrease and it will offer zero resistance
- (B) remain constant and it will not offer resistance
- (C) increase and it will offer more resistance
- (D) decrease and it will offer more resistance
17. Choose the correct statement. In case of insulators,
- (A) conduction band and valence band overlap each other.
- (B) conduction band is empty
- (C) conduction band is partially filled and valence band is partially empty.
- (D) there is no gap between conduction and valence band.
- (A) drift of electrons.
- (B) drift of holes.
- (C) migration of impurity ions.
- (D) diffusion of charge carriers.
- (A) in an intrinsic semiconductor, ne = nh
- (B) In an extrinsic semiconductor, nh = ne
- (C) In an intrinsic semiconductor, nh > ne
- (D) In an intrinsic semiconductor, ne > nh
- (A) valence band and conduction band overlap each other
- (B) valence band and conduction band are separated by a large energy gap
- (C) very small number of electrons are available for electrical conduction
- (D) valence band and conduction band are separated by a small energy
21. A donor impurity results in
- (A) production of p-type semiconductor
- (B) holes as majority carriers and electrons as minority carriers
- (C) conduction hand just above the filled valence hand
- (D) production of n-type semiconductor
- (A) both positive and negative ions.
- (B) only negative ions.
- (C) electrons and holes.
- (D) only positive ions
- (A) width of the depletion layer decreases
- (B) potential barrier decreases
- (C) width of the depletion layer increases
- (D) electrical conduction is possible
